Electrical and Thermal Characteristics
Table 5. Package Thermal Characteristics1 (continued)
Characteristic
Symbol Value Unit Notes
Junction-to-ambient thermal resistance, 200 ft/min airflow, four-layer (2s2p) board
RθJMA
16 °C/W 2, 4
Junction-to-board thermal resistance
RθJB
10 °C/W
5
Junction-to-case thermal resistance
RθJC
< 0.1 °C/W
6
Notes:
1. Refer to Section 9.8, “Thermal Management Information,” for details about thermal management.
2. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, airflow, power dissipation of other components on the board, and board thermal resistance.
3. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal.
4. Per JEDEC JESD51-6 with the board horizontal.
5. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
6. This is the thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1) with the calculated case temperature. The actual value of RθJC for the part is less than 0.1°C/W.
Table 6 provides the DC electrical characteristics for the MPC7447A.
Table 6. DC Electrical Specifications
At recommended operating conditions. See Table 4.
Characteristic
Input high voltage
(all inputs)
Input low voltage
(all inputs)
Input leakage current,
Vin = OVDD
Vin = GND
High-impedance (off-state) leakage current,
Vin = OVDD
Vin = GND
Output high voltage @ IOH = –5 mA
Output low voltage @ IOL = 5 mA
Nominal
Bus Symbol
Min
Voltage 1
Max
Unit Notes
1.8
VIH OVDD × 0.65 OVDD + 0.3 V
2
2.5
1.7
OVDD + 0.3
1.8
VIL
–0.3
OVDD × 0.35 V
2, 6
2.5
–0.3
0.7
—
Iin
—
µA 2, 3
30
– 30
—
ITSI
—
µA 2, 3, 4
30
– 30
1.8
VOH OVDD – 0.45
—
V
2.5
1.8
—
1.8
VOL
—
2.5
—
0.45
V
0.6
MPC7447A RISC Microprocessor Hardware Specifications, Rev. 5
12
Freescale Semiconductor