DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PTN3460 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
PTN3460
NXP
NXP Semiconductors. NXP
PTN3460 Datasheet PDF : 32 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
NXP Semiconductors
PTN3460
eDP to LVDS bridge IC
12. Characteristics
12.1 Device characteristics
Table 16. Device characteristics
Over operating free-air temperature range, unless otherwise noted.
Symbol
Parameter
Conditions
tstartup
start-up time
device start-up time from power-on and
RST_N = HIGH; supply voltage within
operating range to specified operating
characteristics
tw(rst)
td(rst)
td(pwrsave-act)
reset pulse width
reset delay time[1]
delay time from
power-save to active
device is supplied with valid supply voltage
device is supplied with valid supply voltage
time between PD_N going HIGH and HPD
raised HIGH by PTN3460; RST_N is HIGH.
Device is supplied with valid supply voltage.
[1] Time for device to be ready after rising edge of RST_N.
Min Typ Max Unit
-
-
90 ms
10 -
-
-
-
-
-
s
90 ms
90 ms
12.2 Power consumption
Table 17. Power consumption
At operating free-air temperature of 25 C and under nominal supply value (unless otherwise noted).
Symbol Parameter Conditions
Single supply mode
EPS_N = HIGH
or open
Dual supply mode Unit
EPS_N = LOW
Min Typ Max Min Typ Max
Pcons
power
consumption
Active mode;
1440 900 at 60 Hz;
24 bits per pixel; dual LVDS bus
[1] -
430
-
- 290 - mW
Active mode;
1600 900 at 60 Hz;
24 bits per pixel; dual LVDS bus
[1] -
448
-
- 305 - mW
Active mode;
1920 1200 at 60 Hz;
24-bits per pixel; dual LVDS bus
[1] -
570
-
- 380 - mW
D3 mode/Power-saving mode;
when PTN3460 is set to
Power-saving mode via
‘SET_POWER’ AUX command by
eDP source; AUX and HPDRX
circuitry are only kept active
-
27
-
-
15
- mW
Deep power-saving/Shutdown mode;
when PD_N is LOW and the device is
supplied with valid supply voltage
-
5
-
-
2
- mW
[1] For Active mode power consumption, LVDS output swing of 300 mV is considered.
PTN3460
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
20 of 32

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]