PTN3460 Ver la hoja de datos (PDF) - NXP Semiconductors.

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Fabricante

PTN3460

eDP to LVDS bridge IC

NXP Semiconductors. 

NXP Semiconductors

PTN3460

eDP to LVDS bridge IC

10. Limiting values

Table 14. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VDD

VI

Tstg

VESD

supply voltage

input voltage

storage temperature

electrostatic discharge

voltage

3.3 V CMOS inputs

HBM

CDM

[1] 0.3

[1] 0.3

65

[2] -

[3] -

Max

Unit

+4.6

V

VDD + 0.5 V

+150

C

8000

V

1000

V

[1] All voltage values, except differential voltages, are with respect to network ground terminal.

[2] Human Body Model: ANSI/EOS/ESD-S5.1-1994, standard for ESD sensitivity testing, Human Body Model

– Component level; Electrostatic Discharge Association, Rome, NY, USA.

[3] Charged-Device Model: ANSI/EOS/ESD-S5.3-1-1999, standard for ESD sensitivity testing,

Charged-Device Model – Component level; Electrostatic Discharge Association, Rome, NY, USA.

11. Recommended operating conditions

Table 15. Operating conditions

Over operating free-air temperature range, unless otherwise noted.

Symbol Parameter

Conditions

Min Typ Max Unit

VDD(3V3)

VDD(1V8)

VI

supply voltage (3.3 V)

supply voltage (1.8 V)

input voltage

3.3 V CMOS inputs

open-drain I/O with

respect to ground

(e.g., DDC_SCL,

DDC_SDA, MS_SDA,

MS_SCL)

3.0 3.3 3.6 V

1.7 1.8 1.9 V

0

3.3 3.6 V

0

5

5.5 V

Tamb

ambient temperature operating in free air

0

-

70

C

PTN3460

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 12 March 2014

© NXP Semiconductors N.V. 2014. All rights reserved.

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