GT28F400B3B150 Ver la hoja de datos (PDF) - Intel

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Fabricante

GT28F400B3B150

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY

Intel 

SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE

E

5.1 DC Characteristics: VCCQ = 2.7V–3.6V

Table 10. DC Characteristics

Sym

Parameter

Notes VCC = 2.7V–3.6V Unit

Typ Max

ILI

Input Load Current

1

± 1.0

µA

ILO

Output Leakage Current

1

± 10

µA

ICCS VCC Standby Current

1,7

20

50

µA

ICCD VCC Deep Power-Down

1,7

1

10

µA

Current

ICCR VCC Read Current

1,5,7

10

20

mA

ICCW VCC Program Current

1,4,7

8

8

20

mA

20

mA

ICCE VCC Erase Current

1,4,7

8

8

20

mA

20

mA

ICCES VCC Erase Suspend

Current

1,2,4,7 20

50

µA

ICCWS VCC Program Suspend

1,2,4,7

20

50

µA

Current

IPPD VPP Deep Power-Down

1

0.2

5

µA

Current

IPPR VPP Read Current

1

2

±50

µA

Test Conditions

VCC = VCCMax = VCCQMax

VIN = VCCQ or GND

VCC = VCCMax = VCCQMax

VIN = VCCQ or GND

CMOS INPUTS

VCC = VCCMax = VCCQMax

CE# = RP# = VCCQ

CMOS INPUTS

VCC = VCCMax = VCCQMax

VIN = VCCQ or GND

RP# = GND ± 0.2V

CMOS INPUTS

VCC = VCCMax = VCCQMax

OE# = VIH , CE# =VIL

f = 5 MHz,

IOUT = 0 mA

Inputs = VIL or VIH

VPP = VPPH1 (3V)

Program in Progress

VPP = VPPH2 (12V)

Program in Progress

VPP = VPPH1 (3V)

Erase in Progress

VPP = VPPH2 (12V)

Erase in Progress

CE# = VIH

Erase Suspend in Progress

CE# = VIH

Program Suspend in Progress

RP# = GND ± 0.2V

VPP ≤ VCC

30

PRELIMINARY

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