DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DG408BP45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

0.9VD

VD

0.9IT

dVD/dt

IT

VD VDM

0.1VD

td tr

dIFG/dt

tgt

IFG

0.1IFG

VFG

tw1

VDP

tgs

ITAIL

tgf

tgq

IG(ON)

0.1IGQ

QGQ

0.5IGQM

IGQM

V(RG)BR

VRG

Recommended gate conditions:

ITCM = 1000A

IFG = 30A

IG(ON) = 4A d.c.

tw1(min) = 20µs

IGQM = 420A

diGQ/dt = 30A/µs

QGQ = 3000µC

VRG(min) = 2V

VRG(max) = 16V

These are recommended Dynex Semiconductor conditions. Other conditions are permitted

according to users gate drive specifications.

Fig.29 General switching waveforms

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