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Número de pieza
componentes Descripción
DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG408BP45
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG408BP45 Datasheet PDF : 19 Pages
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Conditions:
C
S
= 1.0µF,
I
T
= 1000A
20
DG408BP45
15
T
j
= 125˚C
10
T
j
= 25˚C
5
10
20
30
40
50
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
C
S
= 1.0µF,
dI
GQ
/dt = 30A/µs
1.5
T
j
= 125˚C
1.0
T
j
= 25˚C
0.5
0
0
250
500
750
1000
1250
1500
On-state current I
T
- (A)
Fig.22 Gate fall time vs on-state current
13/19
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