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Número de pieza
componentes Descripción
DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG408BP45
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG408BP45 Datasheet PDF : 19 Pages
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DG408BP45
2.00
1.75
Conditions:
C
S
= 1.0µF,
I
T
= 1000A
1.50
T
j
= 125˚C
1.25
1.00
10
T
j
= 25˚C
20
30
40
50
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of reverse gate current
500
Conditions:
C
S
= 1.0µF,
dI
GQ
/dt = 30A/µs
400
300
T
j
= 125˚C
T
j
= 25˚C
200
100
0
250
500
750
1000
1250
Turn-off current I
T
- (A)
Fig.24 Peak reverse gate current vs turn-off current
1500
14/19
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