DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DG408BP45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

5000

4000

Conditions:

Tj = 125˚C,

VDM = VDRM,

dIGQ/dt = 30A/µs

3000

2000

CS = 0.5µF

CS = 1.5µF

CS = 1.0µF

CS = 2.0µF

1000

0

0

250

500

750

1000

1250

On-state current IT - (A)

Fig.19 Turn-off energy vs on-state current

20.0

Conditions:

CS = 1.0µF,

dIGQ/dt = 30A/µs

15.0

10.0

Tj = 125˚C

Tj = 25˚C

1500

5.0

12/19

0

0

250

500

750

1000

1250

1500

On-state current IT - (A)

Fig.20 Gate storage time vs on-state current

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