DG408BP45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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DG408BP45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG408BP45

4000

3500

Conditions:

CS = 1.0µF,

IT = 1000A

3000

2500

Tj = 125˚C

2000

Tj = 25˚C

1500

10

20

30

40

50

60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.27 Turn-off gate charge vs rate of rise of reverse gate current

1000

750

Conditions:

VD = 66% VDRM

Tj = 125˚C

500

250

0

0.1

1

10

100

Gate cathode resistance RGK - (Ohms)

Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

1000

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