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LT3582EUD Ver la hoja de datos (PDF) - Linear Technology

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LT3582EUD Datasheet PDF : 28 Pages
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LT3582/LT3582-5/LT3582-12
APPLICATIONS INFORMATION
under control of its respective RAMP pin (see Figure 8
below). The power-up sequencing concludes when both
outputs have reached regulation.
Evaluating PUSEQ Settings (LT3582 Only): After SHDN
rises, the LT3582 uses the PUSEQ configuration found
in OTP. The effects of differing PUSEQ settings can be
observed without writing to OTP by taking the following
actions:
1. Write the SWOFF bit high, stopping both converters
and discharging the RAMP pins.
2. Write the desired settings to the PUSEQ bits in
REG2.
3. Set the RSEL2 bit high which selects the REG2
configuration settings.
4. Write SWOFF low which restarts both converters.
This will initiate the desired power-up sequence that can
be observed with an oscilloscope.
Power-Down Discharge (PDDIS bit)
The PDDIS bit is used to enable power down discharge.
This bit is pre-configured to a “1” for the LT3582-5 and
LT3582-12, thus enabling power-down discharge.Setting
PDDIS = 0 disables the power-down discharge causing
the chip to shut down immediately after SHDN falls. The
PDDIS bit must only be set in conjunction with PUSEQ being
set to 11. Driving SHDN low, with power-down discharge
enabled (PDDIS = 1) causes the chip to power-down after
first discharging the output voltages. Specifically, driving
SHDN low causes the following sequence of events to
happen:
1. Both converters are turned off.
2. Discharge currents are enabled to discharge the
output capacitors
• See Electrical Charateristics for IVOUTP-PDS and
ICAPP-PDS which help discharge VOUTP and CAPP
• See Electrical Charateristics for IVOUTN-PDS which
helps discharge VOUTN
3. The chip waits until the output voltages have
discharged to within ~0.5V to ~1.5V of ground.
4. Discharge currents are disabled and the LT3582
powers down.
VRAMPP
0.5V/DIV
VRAMPN
0.5V/DIV
VVOUTP
5V/DIV
VVOUTN
5V/DIV
RAMPP
RAMPN
5ms/DIV
3582512 F08
Figure 8: Power-up Sequencing (PUSEQ=10)
16
3582512f

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