LH28F640SP Ver la hoja de datos (PDF) - Sharp Electronics
Número de pieza
componentes Descripción
Fabricante
LH28F640SP Datasheet PDF : 45 Pages
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LHF64P01
9
Table 4. Bus Operation(1, 2)
Mode
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Notes RP# CE0,1,2 (3) OE#
8
VIH Enabled VIL
VIH Enabled VIH
VIH Disabled X
5
VIL
X
X
8
VIH Enabled VIL
WE#
VIH
VIH
X
X
VIH
Address
X
X
X
X
Refer to
Table 3
VPEN
X
X
X
X
X
DQ (4)
DOUT
High Z
High Z
High Z
Refer to
Table 3
STS (10)
X
X
X
High Z
X
Read Query
8,9 VIH Enabled VIL
VIH
See
Appendix
X
See
Appendix
X
Write
6,7,8 VIH Enabled VIH
VIL
X
X
DIN
X
NOTES:
1. Refer to DC Characteristics. When VPEN≤VPENLK, memory contents can be read, but cannot be altered.
2. X can be VIL or VIH for control pins and addresses, and VPENLK or VPENH for VPEN.
Refer to DC Characteristics for VPENLK and VPENH voltages.
3. Refer to Table 2 to determine whether the device is selected or de-selected depending on the state of CE0, CE1 and CE2.
4. DQ refers to DQ15-DQ0 in word mode (BYTE#=VIH : ×16 bit) and DQ7-DQ0 in byte mode (BYTE#=VIL : ×8 bit).
5. RP# at GND±0.2V ensures the lowest power consumption.
6. Command writes involving block erase, (page buffer) program, block lock configuration or OTP program are reliably
executed when VPEN=VPENH and VCC=2.7V-3.6V.
7. Refer to Table 5 for valid DIN during a write operation.
8. Never hold OE# low and WE# low at the same timing.
9. Refer to Appendix of LH28F640SP series for more information about query code.
10. STS is VOL when the WSM (Write State Machine) is executing internal block erase, (page buffer) program or OTP
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program and page
buffer program inactive), (page buffer) program suspend mode, or reset mode.
Rev. 0.06
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