AB28F400BX-T90 Ver la hoja de datos (PDF) - Intel

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AB28F400BX-T90

4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY

Intel 

A28F400BX-T B

Table 1 Bus Operations for WORD-WIDE Mode (BYTE e VIH)

Mode

Notes RP

CE

OE

WE

A9 A0 VPP DQ0–15

Read

1 2 3 VIH

VIL

VIL

VIH

XX

X

DOUT

Output Disable

VIH

VIL

VIH

VIH

X

X

X

High Z

Standby

VIH

VIH

X

X

X

X

X

High Z

Deep Power-Down

9

VIL

X

X

X

X

X

X

High Z

Intelligent Identifier (Mfr)

4

VIH

VIL

VIL

VIH

VID VIL

X

0089H

Intelligent Identifier (Device) 4 5

VIH

VIL

VIL

VIH VID VIH X

4470H

4471H

Write

6 7 8 VIH

VIL

VIH

VIL

X

X

X

DIN

Mode

Read

Output Disable

Standby

Deep Power-Down

Intelligent

Identifier (Mfr)

Intelligent

Identifier (Device)

Write

Table 2 Bus Operations for BYTE-WIDE Mode (BYTE e VIL)

Notes RP CE OE WE A9 A0 Ab1 VPP

1 2 3 VIH VIL VIL VIH X X

X

X

VIH VIL VIH VIH X X

X

X

VIH VIH

X

X

XX X

X

9

VIL

X

X

X

XX X

X

4

VIH

VIL

VIL

VIH VID VIL X

X

45

VIH

VIL

VIL

VIH VID VIH X

X

6 7 8 VIH VIL VIH VIL X X

X

X

DQ0 – 7

DOUT

High Z

High Z

High Z

89H

70H

71H

DIN

DQ8 – 14

High Z

High Z

High Z

High Z

High Z

High Z

High Z

NOTES

1 Refer to DC Characteristics

2 X can be VIL VIH for control pins and addresses VPPL or VPPH for VPP

3 See DC Characteristics for VPPL VPPH VHH VID voltages

4 Manufacturer and Device codes may also be accessed via a CUI write sequence A1 – A17 e X

5 Device ID e 4470H for A28F400BX-T and 4471H for A28F400BX-B

6 Refer to Table 3 for valid DIN during a write operation

7 Command writes for Block Erase or Word Byte Write are only executed when VPP e VPPH

8 To write or erase the boot block hold RP at VHH

9 RP must be at GND g0 2V to meet the 80 mA maximum deep power-down current

3 2 Read Operations

The 4-Mbit boot block flash family has three user

read modes Array Intelligent Identifier and Status

Register Status Register read mode will be dis-

cussed in detail in the ‘‘Write Operations’’ section

During power-up conditions (VCC supply ramping) it

takes a maximum of 300 ns from when VCC is at

4 5V minimum to valid data on the outputs

3 2 1 READ ARRAY

If the memory is not in the Read Array mode it is

necessary to write the appropriate read mode com-

mand to the CUI The 4-Mbit boot block flash family

has three control functions all of which must be logi-

cally active to obtain data at the outputs Chip-En-

able CE is the device selection control Reset

Power-Down RP is the device power control Out-

put-Enable OE is the DATA INPUT OUTPUT

(DQ 0 15 or DQ 0 7 ) direction control and when

active is used to drive data from the selected memo-

ry on to the I O bus

11

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