TE28F400B3T110 Ver la hoja de datos (PDF) - Intel
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TE28F400B3T110 Datasheet PDF : 48 Pages
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SMART 3 ADVANCED BOOT BLOCK
E
When VPP < VPPLK, the device will only execute the
following commands successfully: Read Array,
Read Status Register, Clear Status Register and
Read Identifier. The device provides standard
EEPROM read, standby and output disable
operations. Manufacturer identification and device
identification data can be accessed through the
CUI. All functions associated with altering memory
contents, namely program and erase, are
accessible via the CUI. The internal Write State
Machine (WSM) completely automates program
and erase operations while the CUI signals the start
of an operation and the status register reports
status. The CUI handles the WE# interface to the
data and address latches, as well as system status
requests during WSM operation.
3.1 Bus Operation
Smart 3 Advanced Boot Block flash memory
devices read, program and erase in-system via the
local CPU or microcontroller. All bus cycles to or
from the flash memory conform to standard
microcontroller bus cycles. Four control pins dictate
the data flow in and out of the flash component:
CE#, OE#, WE# and RP#. These bus operations
are summarized in Table 3.
Table 3. Bus Operations(1)
Mode
Read (Array, Status, or
Identifier)
Note
2–4
RP#
VIH
CE#
VIL
OE#
VIL
WE#
VIH
DQ0–7
DOUT
Output Disable
2
VIH
VIL
VIH
VIH
High Z
Standby
2
VIH
VIH
X
X
High Z
Reset
2, 7
VIL
X
X
X
High Z
Write
2, 5–7
VIH
VIL
VIH
VIL
DIN
NOTES:
1. 8-bit devices use only DQ[0:7], 16-bit devices use DQ[0:15]
2. X must be VIL, VIH for control pins and addresses.
3. See DC Characteristics for VPPLK, VPP1, VPP2, VPP3, VPP4 voltages.
4. Manufacturer and device codes may also be accessed in read identifier mode (A1–A21 = 0). See Table 4.
5. Refer to Table 6 for valid DIN during a write operation.
6. To program or erase the lockable blocks, hold WP# at VIH.
7. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.
DQ8–15
DOUT
High Z
High Z
High Z
DIN
12
PRELIMINARY
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