SI4483EDY(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

SI4483EDY
(Rev.:2004)

P-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

P-Channel 30-V (D-S) MOSFET

Si4483EDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

0.0085 @ VGS = −10 V

−30

0.014 @ VGS = −4.5 V

ID (A)

−14

−11

FEATURES

D TrenchFETr Power MOSFET

D ESD Protection: 3000 V

APPLICATIONS

D Notebook PC

− Load Switch

− Adapter Switch

SO-8

S1

S2

S3

G4

8D

7D

6D

5D

Top View

Ordering Information: Si4483EDY-T1—E3

S

G

7100 W

P-Channel

D

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs Steady State

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150_C)a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)a

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

VDS

VGS

ID

IDM

IS

PD

TJ, Tstg

−30

"25

−14

−10

−11

−8

−50

−2.7

−1.36

3.0

1.5

1.9

0.95

−55 to 150

Unit

V

A

W

_C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72862

S-42139—Rev. B, 15-Nov-04

t v 10 sec

Steady State

Steady State

Symbol

RthJA

RthJF

Typical

33

70

16

Maximum

42

85

21

Unit

_C/W

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