SI4483EDY(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

SI4483EDY
(Rev.:2004)

P-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

Si4483EDY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

0.8

50

0.6

40

ID = 250 mA

0.4

30

0.2

20

0.0

10

−0.2

Single Pulse Power

−0.4

−50 −25

0 25 50 75 100 125 150

TJ − Temperature (_C)

0

0.01

0.1

Safe Operating Area, Junction-to-Case

100

1

10

Time (sec)

100 600

*Limited by rDS(on)

10

1

0.1

TC = 25_C

Single Pulse

1 ms

10 ms

100 ms

1s

10 s

dc

2

1

Duty Cycle = 0.5

0.01

0.1

1

10

100

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.2

0.1

0.1

0.05

0.02

0.01

10−4

Single Pulse

10−3

10−2

10−1

1

Square Wave Pulse Duration (sec)

Notes:

PDM

t1

t2

1. Duty Cycle, D =

t1

t2

2. Per Unit Base = RthJA = 70_C/W

3. TJM − TA = PDMZthJA(t)

4. Surface Mounted

10

100

600

www.vishay.com

4

Document Number: 72862

S-42139—Rev. B, 15-Nov-04

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