SI4483EDY(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4483EDY Datasheet PDF : 5 Pages
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Si4483EDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "25 V
"1
mA
"10
mA
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = −30 V, VGS = 0 V
VDS = −30 V, VGS = 0 V, TJ = 70_C
VDS = −5 V, VGS = −10 V
VGS = −10 V, ID = −14 A
VGS = −4.5 V, ID = −11 A
VDS = −15 V, ID = −14 A
IS = −2.7 A, VGS = 0 V
−1
mA
−10
−30
A
0.007
0.0085
W
0.0115
0.014
60
S
−0.74
−1.1
V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = −15 V, RL = 15 W
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
10
15
20
30
ms
42
65
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
2
0
0
5
10
15
20
25
30
VGS − Gate-to-Source Voltage (V)
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2
Gate Current vs. Gate-Source Voltage
100
10
TJ = 150_C
1
0.1
TJ = 25_C
0.01
0.001
0.0001
0
6
12
18
24
30
VGS − Gate-to-Source Voltage (V)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
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