Table 15
Typ. transfer characteristics
600V CoolMOS" E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Typ. gate charge
ID=f(VGS); VDS=20V
Table 16
Avalanche energy
VGS=f(Qgate), ID=3.5 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=1.4 A; VDD=50 V
Final Data Sheet
VBR(DSS)=f(Tj); ID=0.25 mA
11
Rev. 2.02, 20104-0142-0190