6R520E6(2014) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

6R520E6
(Rev.:2014)

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Test circuits

6

Test circuits

Table 19 Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load Switching time waveform

VGS

VDS

VDS

90%

VGS

10%

td(on) tr

ton

td(off) tf

toff

Table 20 Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit

Unclamped inductive waveform

ID

VDS

V(BR)DS

VD

VDS

VDS

ID

Table 21 Test circuit and waveform for diode characteristics

Test circuit for diode characteristics

Diode recovery waveform

ID

RG1

RG2

VDS

#

/#) #/$

)

--,

$00 ( $. " $)

!00 ( ! . " !)

$00

$.

$)

!. !)

%$! --, $

/#00 #/$ "--,

'$! --,

RG1 = RG2

.*+$$$&&

Final Data Sheet

13

Rev. 2.02, 20104-0142-0190

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