6R520E6(2014) Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

6R520E6
(Rev.:2014)

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

600VCoolMOS™E6PowerTransistor

IPx60R520E6

RevisionHistory

IPx60R520E6

Revision:2015-02-09,Rev.2.2

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.0

2011-06-08 Release final data sheet

2.1

2011-09-14 -

2.2

2015-02-09 PG-TO220 FullPAK package outline update (creation:2014-12-10)

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©2015InfineonTechnologiesAG

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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With

respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication

ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout

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Warnings

Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,

pleasecontactthenearestInfineonTechnologiesOffice.

TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or

automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa

failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand

aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare

intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis

reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

16

Rev.2.2,2015-02-09

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