IDT71T024
LOW POWER 2V CMOS STATIC RAM 1 MEG (128K x 8-BIT)
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (VDD = 1.8 to 2.7V, All Temperature Ranges)
71T024L150
Symbol
Parameter
Min. Max.
Read Cycle
tRC
Read Cycle Time
150 —
tAA
Address Access Time
— 150
tACS
tCLZ(1)
tCHZ(1)
Chip Select Access Time
Chip Select Low to Output in Low-Z
Chip Select High to Output in High-Z
— 150
20
—
—
30
tOE
tOLZ(1)
tOHZ(1)
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
Output Enable High to Output in High-Z
—
75
20
—
—
30
tOH
Output Hold from Address Change
15
—
Write Cycle
tWC
Write Cycle Time
150 —
tAW
Address Valid to End of Write
120 —
tCW
Chip Select Low to End of Write
120 —
tAS
Address Set-up Time
0
—
tWR
Address Hold from End of Write
0
—
tWP
Write Pulse Width
100 —
tDW
Data Valid to End of Write
60
—
tDH
tOW(1)
tWHZ(1)
Data Hold Time
Write Enable High to Output in Low-Z
Write Enable Low to Output in High-Z
0
—
5
—
—
40
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
71T024L200
Min. Max. Units
200 — ns
— 200 ns
— 200 ns
20
— ns
—
40 ns
— 100 ns
20
— ns
—
40 ns
15
— ns
200 — ns
160 — ns
160 — ns
0
— ns
0
— ns
140 — ns
80
— ns
0
— ns
5
— ns
—
50 ns
3779 tbl 11
5