DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBM29LV800BA-120PFTR Ver la hoja de datos (PDF) - Fujitsu

Número de pieza
componentes Descripción
Fabricante
MBM29LV800BA-120PFTR
Fujitsu
Fujitsu Fujitsu
MBM29LV800BA-120PFTR Datasheet PDF : 59 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
MBM29LV800TA-70/-90/-12/MBM29LV800BA-70/-90/-12
s FUNCTIONAL DESCRIPTION
Read Mode
The MBM29LV800TA/BA have two control functions which must be satisfied in order to obtain data at the outputs.
CE is the power control and should be used for a device selection. OE is the output control and should be used
to gate data to the output pins if a device is selected.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after
power-up, it is necessary to input hardware reset or change CE pin from “H†or “Lâ€
Standby Mode
There are two ways to implement the standby mode on the MBM29LV800TA/BA devices, one using both the CE
and RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V.
Under this condition the current consumed is less than 5 µA. The device can be read with standard access time
(tCE) from either of these standby modes. During Embedded Algorithm operation, VCC active current (ICC2) is
required even CE = “Hâ€.
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V
(CE = “H†or “Lâ€). Under this condition the current is consumed is less than 5 µA. Once the RESET pin is taken
high, the device requires tRH of wake up time before outputs are valid for read access.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Automatic Sleep Mode
There is a function called automatic sleep mode to restrain power consumption during read-out of
MBM29LV800TA/800BA data. This mode can be used effectively with an application requested low power
consumption such as handy terminals.
To activate this mode, MBM29LV800TA/800BA automatically switch themselves to low power mode when
MBM29LV800TA/800BA addresses remain stably during access fine of 150 ns. It is not necessary to control CE,
WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level).
Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed,
the mode is canceled automatically and MBM29LV800TA/800BA read-out the data for changed addresses.
Output Disable
With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins
to be in a high impedance state.
Autoselect
The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the devices to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the devices.
To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two
identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All
addresses are DON’T CARES except A0, A1, A6, and A-1. (See Table 4.1.)
11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]