PMBFJ309 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMBFJ309 Datasheet PDF : 15 Pages
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NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
40
ID
(mA)
30
mcd217
(1)
(2)
40
ID
(mA)
30
mcd214
20
(3)
(4)
10
(5)
(6)
0
0
4
8
12
16
VDS (V)
Tj = 25 C.
(1) VGS = 0 V.
(2) VGS = 0.5 V.
(3) VGS = 1 V.
(4) VGS = 1.5 V.
(5) VGS = 2 V.
(6) VGS = 2.5 V.
Fig 10. Typical output characteristics; PMBFJ310.
4
Crs
(pF)
3
mcd224
2
1
20
10
0
−4
−3
−2
VDS = 10 V; Tj = 25 C.
−1
0
VGS (V)
Fig 11. Typical transfer characteristics; PMBFJ310.
10
Cis
(pF)
8
mcd223
6
4
2
0
−10
−8
−6
−4
−2
0
VGS (V)
VDS = 10 V; Tj = 25 C.
Fig 12. Reverse transfer capacitance as a function of
gate-source voltage; typical values.
0
−10
−8
−6
−4
−2
0
VGS (V)
VDS = 10 V; Tj = 25 C.
Fig 13. Input capacitance as a function of gate-source
voltage; typical values.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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