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PMBFJ309 Datasheet PDF : 15 Pages
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NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
IDSS
Ptot
yfs
drain current
PMBFJ308
PMBFJ309
PMBFJ310
total power dissipation
forward transfer admittance
VGS = 0 V; VDS = 10 V
VGS = 0 V; VDS = 10 V
VGS = 0 V; VDS = 10 V
up to Tamb = 25 C
VDS = 10 V; ID = 10 mA
Min Typ Max Unit
12 -
12 -
24 -
--
10 -
60 mA
30 mA
60 mA
250 mW
- mS
2. Pinning information
Table 2.
Pin
1
2
3
Discrete pinning[1]
Description
source
drain
gate
Simplified outline Symbol
3
1
2
2
3
1
sym060
[1] Drain and source are interchangeable.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PMBFJ308
-
plastic surface mounted package; 3 leads
PMBFJ309
PMBFJ310
4. Marking
Table 4. Marking
Type number
PMBFJ308
PMBFJ309
PMBFJ310
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Marking code[1]
48*
49*
50*
Version
SOT23
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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