PMBFJ309 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMBFJ309 Datasheet PDF : 15 Pages
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NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
50
IDSS
(mA)
40
mcd220
30
20
10
0
0
−1
−2
−3
−4
VGSoff (V)
Fig 2.
VDS = 10 V; Tj = 25 C.
Drain current as a function of gate-source
cut-off voltage; typical values.
150
gos
(μS)
mcd221
100
50
20
yfs
(mS)
16
mcd219
12
8
4
0
0
−2
−4
−6
−8
VGSoff (V)
Fig 3.
VDS = 10 V; ID = 10 mA; Tj = 25 C.
Forward transfer admittance as a function of
gate-source cut-off voltage; typical values.
80
RDSon
(Ω)
60
mcd222
40
20
0
0
−1
−2
−3
−4
VGSoff (V)
0
0
−1
−2
−3
−4
VGSoff (V)
Fig 4.
VDS = 10 V; ID = 10 mA; Tj = 25 C.
Common-source output conductance as a
function of gate-source cut-off voltage; typical
values.
Fig 5.
VDS = 100 mV; VGS = 0 V; Tj = 25 C.
Drain-source on-state resistance as a function
of gate-source cut-off voltage; typical values.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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