PMBFJ309 Ver la hoja de datos (PDF) - NXP Semiconductors.

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componentes Descripción

Fabricante

PMBFJ309

N-channel silicon field-effect transistors

NXP Semiconductors. 

NXP Semiconductors

PMBFJ308; PMBFJ309; PMBFJ310

N-channel silicon field-effect transistors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDS

VGSO

VGDO

IG

Ptot

Tstg

Tj

drain-source voltage (DC)

gate-source voltage

gate-drain voltage

forward gate current (DC)

total power dissipation

storage temperature

junction temperature

open drain

open source

up to Tamb = 25 C

Min Max Unit

-

25 V

-

25 V

-

25 V

-

50 mA

-

250 mW

65 +150 C

-

150 C

400

Ptot

(mW)

300

mbb688

200

100

0

0

50

Fig 1. Power derating curve.

100

150

200

Tamb (°C)

6. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance from junction to ambient

[1] Device mounted on an FR4 printed-circuit board.

Conditions

Typ

[1] 500

Unit

K/W

PMBFJ308_309_310

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 20 September 2011

© NXP B.V. 2011. All rights reserved.

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