PBSS3515E Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
PBSS3515E Datasheet PDF : 12 Pages
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NXP Semiconductors
300
Ptot
(mW)
200
100
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
006aaa412
(1)
(2)
0
0
40
80
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
120
160
Tamb (°C)
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
833 K/W
[2] -
-
500 K/W
-
-
175 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS3515E_2
Product data sheet
Rev. 02 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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