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PBSS3515E Datasheet PDF : 12 Pages
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NXP Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
600
(1)
hFE
400
(2)
200
(3)
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−1.2
IC
(A)
−0.8
−0.4
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IB = −10 mA
−9
−8
−7
−6
−5
−4
−3
−2
−1
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
−1100
VBE
(mV)
−900
(1)
−700
(2)
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−500
(3)
−300
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
−1.3
VBEsat
(V)
−0.9
(1)
(2)
(3)
−0.5
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−100
−10−1
−1
−10
−102
−103
IC (mA)
−0.1
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS3515E_2
Product data sheet
Rev. 02 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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