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PBSS3515E Datasheet PDF : 12 Pages
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NXP Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
−1
VCEsat
(V)
−10−1
−10−2
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(1)
(2)
(3)
−1
VCEsat
(V)
−10−1
(1)
(2)
−10−2
(3)
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−10−3
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
102
RCEsat
(Ω)
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10
1
(1)
(2)
(3)
−10−3
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
(1)
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10
(2)
(3)
1
10−1
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10−1
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS3515E_2
Product data sheet
Rev. 02 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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