EC103D1 Ver la hoja de datos (PDF) - NXP Semiconductors.
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EC103D1 Datasheet PDF : 12 Pages
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NXP Semiconductors
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; see Figure 8
IL
latching current
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ;
see Figure 10
IH
holding current
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ;
see Figure 11
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
IR
reverse current
Dynamic characteristics
IT = 1 A
IT = 10 mA; see Figure 7
VD = 12 V
VD = VDRM(max); Tj = 125 °C
VD = VDRM(max); Tj = 125 °C;
RGK = 1 kΩ
VR = VRRM(max); Tj = 125 °C;
RGK = 1 kΩ
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; RGK = 1 kΩ;
see Figure 12
tgt
gate-controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA;
time
dIG/dt = 0.1 A/µs
tq
commutated turn-off VDM = 0.67 × VDRM(max); Tj = 125 °C;
time
ITM = 1.6 A; VR = 35 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 2 V/µs;
RGK = 1 kΩ
EC103D1
Thyristor, sensitive gate
Min
Typ
Max Unit
-
3
12
µA
-
2
6
mA
-
2
5
mA
-
1.2
1.35 V
-
0.5
0.8
V
0.2
0.3
-
V
-
0.05 0.1
mA
-
0.05 0.1
mA
-
150
-
V/µs
-
2
-
µs
-
100
-
µs
EC103D1_2
Product data sheet
Rev. 02 — 31 July 2008
© NXP B.V. 2008. All rights reserved.
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