EC103D1 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

EC103D1

Thyristor, sensitive gate

NXP Semiconductors. 

NXP Semiconductors

EC103D1

Thyristor, sensitive gate

3. Ordering information

Table 2. Ordering information

Type number Package

Name

Description

EC103D1

TO-92

plastic single-ended leaded (through hole) package; 3 leads

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VDRM

repetitive peak off-state voltage

-

VRRM

repetitive peak reverse voltage

-

VDSM

non-repetitive peak off-state voltage

-

VRSM

non-repetitive peak reverse voltage

-

IT(AV)

average on-state current

half sine wave; Tlead ≤ 92 °C;

-

see Figure 1

IT(RMS)

RMS on-state current

all conduction angles;

-

see Figure 4 and 5

ITSM

non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to

surge; see Figure 2 and 3

t = 10 ms

-

t = 8.3 ms

-

I2t

I2t for fusing

tp = 10 ms

-

dIT/dt

rate of rise of on-state current

ITM = 2 A; IG = 10 mA;

-

dIG/dt = 0.1 A/µs

IGM

peak gate current

-

VRGM

peak reverse gate voltage

-

PGM

peak gate power

-

PG(AV)

average gate power

over any 20 ms period

-

Tstg

storage temperature

−40

Tj

junction temperature

-

Version

SOT54

Max Unit

400

V

400

V

450

V

450

V

0.5

A

0.8

A

8

A

9

A

0.32

A2s

50

A/µs

1

A

5

V

2

W

0.1

W

+150 °C

125

°C

EC103D1_2

Product data sheet

Rev. 02 — 31 July 2008

© NXP B.V. 2008. All rights reserved.

2 of 12

Share Link: