NXP Semiconductors
EC103D1
Thyristor, sensitive gate
2.0
IH
IH(25°C)
1.6
1.2
003aaa115
104
dVD/dt
(V/µs)
103
003aac341
0.8
(1)
102
0.4
0
−50
0
50
100
150
Tj (°C)
RGK = 1 kΩ
Fig 11. Normalized holding current as a function of
junction temperature
10
0
50
100
150
Tj (°C)
(1) RGK = 1 kΩ
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
7. Package information
Epoxy meets requirements of UL 94 V-0 at 3.175 mm
EC103D1_2
Product data sheet
Rev. 02 — 31 July 2008
© NXP B.V. 2008. All rights reserved.
8 of 12