T431616D Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza

componentes Descripción

Fabricante

T431616D

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616D/E

Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3V, Ta = 0~70°C)

Description/Test condition

Operating Current

tRC ≥ tRC(min), Outputs Open, Input

signal one transition per one cycle

1 bank

operation

Precharge Standby Current in non-power down mode

tCK = tCK(min), CS# ≥ VIH, CKE = VIH

Input signals are changed once during 30ns.

Precharge Standby Current in power down mode

tCK = tCK(min), CKE ≤ VIL(max)

Symbol

- 5/6/7(T431616D) - 7(T431616E)

Max.

Max.

Unit

Note

130/115/100

40

3

IDD1

IDD2N

25

15

3

IDD2P

2

0.8

3

Precharge Standby Current in power down mode

tCK = ∞,CKE ≤ VIL(max)

Active Standby Current in power down mode

CKE ≤ VIL(max), tCK = tCK(min)

Active Standby Current in non-power down mode

CKE ≥ VIL(max), tCK = tCK(min)

Operating Current (Burst mode)

tCK=tCK(min), Outputs Open, Multi-bank interleave,gapless data

Refresh Current

tRC ≥ tRC(min)

Self Refresh Current

VIH ≥ VDD - 0.2, 0V ≤ VIL ≤ 0.2V

IDD2PS

IDD3P

IDD3N

IDD4

IDD5

IDD6

2

2

40

165/150/140

115/100/90

2

0.8

mA

1.5

3

20

40

3, 4

40

3

0.6

Parameter

IIL

IOL

VOH

VOL

Description

Input Leakage Current

( 0V ≤ VIN ≤ VDD, All other pins not under test = 0V )

Output Leakage Current

Output disable, 0V ≤ VOUT ≤ VDDQ)

LVTTL Output "H" Level Voltage

( IOUT = -2mA )

LVTTL Output "L" Level Voltage

( IOUT = 2mA )

Min.

- 10

- 10

2.4

-

Max.

10

Unit Note

uA

10

uA

-

V

0.4

V

TM Technology Inc. reserves the right

P. 18

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

Share Link: