T431616D Ver la hoja de datos (PDF) - Taiwan Memory Technology

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componentes Descripción

Fabricante

T431616D

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616D/E

Timing Waveforms

Figure 1. AC Parameters for Write Timing (Burst Length=4, CAS# Latency=2)

T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CL K

tCH

tCL

tCK2

CKE

tIS

Begin AutoPrecharge

Begin AutoPrecharge

Bank A

Bank B

tIS

tIH

tIS

CS#

RAS#

CAS#

WE #

A11

A10

A0-A9

tIH

RAx

tIS

RBx

CAx

RBx

RBx

CBx

RAy

RAy

CAy

RAz

RBy

RAz

RBy

DQM

Hi-Z

DQ

tRCD

tRC

tDAL

tIS

tIH

tWR tRP

Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3

tRRD

Activate Writewith Activate Write with Activate

Command AutoPrecharge Command AutoPrecharge Command

Bank A Command Bank B Command Bank A

Bank A

Bank B

Write

Command

Bank A

Precharge Activate

Command Command

Bank A Bank A

Activate

Command

Bank B

TM Technology Inc. reserves the right

P. 21

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

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