STPS10L40CT(1999) Ver la hoja de datos (PDF) - STMicroelectronics
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Fabricante
STPS10L40CT Datasheet PDF : 6 Pages
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Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB and D2PAK).
STPS10L40CT/CG/CF
Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (ISOWATT220AB).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
IM(A)
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AB and D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
T
tp(s)
1E-1
δ=tp/T
tp
1E+0
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(mA)
1E+2
Tj=150°C
1E+1
Tj=100°C
1E+0
1E-1
1E-2
1E-3
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
1000
F=1MHz
Tj=25°C
100
10
1
2
VR(V)
5
10
20
50
3/6
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