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STPS10L40CT(1999) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STPS10L40CT
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS10L40CT Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.DataSheet4U.com
®
STPS10L40CT/CG/CF
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2x5 A
40 V
150°C
0.46 V
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
AVALANCHE RATED
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB and
D2PAK, these devices are intended for use in low
voltage, high frequency inverters, free-wheeling
and polarity protection applications.
A1
K
A2
K
A2
A1
D2PAK
STPS10L40CG
A2
A1 K
TO-220AB
STPS10L40CT
A2
K
A1
ISOWATT220AB
STPS10L40CF
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF( RMS)
IF(AV)
IFSM
IRRM
IRSM
Tstg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 135°C Per diode
δ = 0.5
Per device
Surge non repetitive forward current
tp = 10 ms Sinusoidal
Repetitive peak reverse current
tp=2 µs square F=1kHz
Non repetitive peak reverse current
tp = 100 µs square
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
40
20
5
10
150
1
2
- 65 to + 150
150
10000
*
:
dPtot
dTj
<
1
Rth(ja)
thermal
runaway condition for a diode on its own heatsink
Unit
V
A
A
A
A
A
°C
°C
V/µs
July 1999 - Ed: 4A
1/6

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