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P89C669BBD

80C51 8-bit microcontroller family with extended memory; 96 kB Flash with 2 kB RAM

Philips Electronics 

Philips Semiconductors

P89C669

80C51 8-bit microcontroller family with extended memory

7. Functional description

7.1 Flash memory description

The P89C669 contains 96 kbytes of Flash program memory. It is organized as

12 separate blocks, each block containing 8 kbytes.

The P89C669 Flash memory augments EPROM functionality with in-circuit electrical

erasure and programming. The Flash can be read and written as bytes. The Chip

Erase operation will erase the entire program memory. The Block Erase function can

erase any Flash byte block. In-system programming and standard parallel

programming are both available. On-chip erase and write timing generation contribute

to a user friendly programming interface. The P89C669 Flash reliably stores memory

contents even after 10,000 erase and program cycles. The cell is designed to

optimize the erase and programming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal electric fields for erase and

programming operations produces reliable cycling. The P89C669 uses a +5 V VPP

supply to perform the Program/Erase algorithms.

• Flash internal program memory with Block Erase.

• Internal 4 kbytes Boot Flash, containing low-level in-system programming routines

and a default UART loader. User program can call these routines to perform

In-Application Programming (IAP). The BootFlash can be turned off to provide

access to the full 8 Mbytes memory space.

• Boot vector allows user provided Flash loader code to reside anywhere in the

Flash memory space. This configuration provides flexibility to the user.

• Default loader in BootFlash allows programming via the UART interface without the

need for a user provided loader.

• Up to 8 Mbytes of external program memory if the internal program memory is

disabled (EA = 0).

• +5 V programming and erase voltage.

• Read/Programming/Erase using ISP/IAP:

– Byte Programming (20 µs).

– Typical quick erase times (including preprogramming time):

– Block Erase (8 kbytes) in 1 second.

– Full Erase (96 kbytes) in 1 second.

• Parallel programming with 87C51-like hardware interface to programmer.

• Programmable security for the code in the Flash.

• 10,000 minimum erase/program cycles for each byte.

• 10 year minimum data retention.

9397 750 12299

Product data

Rev. 02 — 13 November 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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