DG306AE25 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG306AE25 Datasheet PDF : 19 Pages
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DG306AE25
1000
900
800
Conditions:
Tj = 125°C
Cs = 1.0µF
dIGQ/dt = 15A/µs
700
600
500
400
300
200
100
0
100
200
300
400
500
On-state current - (A)
Fig.17 Turn-off energy vs on-state current
VDM = 2000V
VDM = 1500V
VDM = 1000V
600
1100
1000
VDM = 2000V
900
VDM = 1500V
800
700
Conditions: VDM = 1000V
IT = 600A
Tj = 125°C
Cs = 1.0µF
600
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
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