DG306AE25 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG306AE25

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

1600

Tj = 125°C

1400

Tj = 25°C

1200

Conditions:

IT = 600A

Cs = 1.0µF

1000

800

0

5 10 15 20 25 30 35 40

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.27 Turn-off gate charge vs rate of rise or reverse gate current

3000

VD =1500V

1000

16/19

100

50

10

1

10

Gate cathode resistance RGK - (Ohms)

Fig.28 Typical rate of rise of off-state voltage vs gate cathode resistance

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