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Número de pieza
componentes Descripción
DG306AE25 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG306AE25
Gate Turn-off Thyristor
Dynex Semiconductor
DG306AE25 Datasheet PDF : 19 Pages
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DG306AE25
300
Conditions:
I
T
= 600A
Cs = 1.0µF
250
200
T
j
= 125°C
T
j
= 25°C
150
100
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.25 Reverse gate current vs rate of rise of reverse gate current
1375
Conditions:
1250
V
DM
= 1500V
dI
GQ
/dt = 15A/
µ
s
1125
1000
875
750
T
j
= 125°C
T
j
= 25°C
625
500
375
250
125
0
100
200
300
400
500
600
On-state current - (A)
Fig.26 Turn-off gatecharge vs on-state voltage
15/19
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