KM681002B Ver la hoja de datos (PDF) - Samsung

Número de pieza

componentes Descripción

Fabricante

KM681002B

128K x 8 Bit High-Speed CMOS Static RAM

Samsung 

KM681002B, KM681002BI

PRELIMINARY

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CMOS SRAM

AC CHARACTERISTICS (TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

TEST CONDITIONS

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

NOTE: The above test conditions are also applied at industrial temperature range.

Output Loads(A)

DOUT

ZO = 50Ω

RL = 50Ω

VL = 1.5V

30pF*

Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

DOUT

255Ω

+5.0V

480Ω

5pF*

* Capacitive Load consists of all components of the

test environment.

* Including Scope and Jig Capacitance

READ CYCLE

Parameter

Read Cycle Time

Address Access Time

Chip Select to Output

Output Enable to Valid Output

Chip Enable to Low-Z Output

Output Enable to Low-Z Output

Chip Disable to High-Z Output

Output Disable to High-Z Output

Output Hold from Address Change

Chip Selection to Power Up Time

Chip Selection to Power DownTime

Symbol

tRC

tAA

tCO

tOE

tLZ

tOLZ

tHZ

tOHZ

tOH

tPU

tPD

KM681002B-8

Min

Max

8

-

-

8

-

8

-

4

3

-

0

-

0

4

0

4

3

-

0

-

-

8

NOTE: The above parameters are also guaranteed at industrial temperature range.

KM681002B-10

Min

Max

10

-

-

10

-

10

-

5

3

-

0

-

0

5

0

5

3

-

0

-

-

10

KM681002B-12

Unit

Min

Max

12

-

ns

-

12

ns

-

12

ns

-

6

ns

3

-

ns

0

-

ns

0

6

ns

0

6

ns

3

-

ns

0

-

ns

-

12

ns

-4-

Rev 2.0

February 1998

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