FDT461N Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDT461N Datasheet PDF : 10 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
200
100
CISS = CGS + CGD
COSS ≅ CDS + CGD
10
CRSS = CGD
VGS = 0V, f = 1MHz
1
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
10
VDD = 50V
8
6
ID = 0.54A
4
2
0
0
0.5
1.0
1.5
2.0
2.5
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Current
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VGS
tP
0V
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 14. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 15. Unclamped Energy Waveforms
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
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