FDT461N Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDT461N Datasheet PDF : 10 Pages
| |||
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
100
VDS = 80V
VGS = 0V
-
TC = 125oC
-
VGS = ±20V
-
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 0.54A, VGS = 10V
ID = 0.4A, VGS = 4.5V
ID = 0.54A, VGS = 10V,
TJ = 150oC
0.8
-
2
V
-
1.40 2.0
-
1.45 2.5
Ω
-
2.80 4.0
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(4.5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 4.5V
VGS = 0V to 1V
VDD = 50V
ID = 0.54A
Ig = 1.0mA
-
74
-
pF
-
11
-
pF
-
2.5
-
pF
2.36 4.0
nC
-
1.27 2.0 nC
0.1 0.15 nC
-
0.37
-
nC
-
0.27
-
nC
-
0.25
-
nC
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
VDD = 50V, ID = 0.54A
VGS = 10V, RGS = 120Ω
-
-
6.5
ns
-
3
-
ns
-
1.3
-
ns
-
63
-
ns
-
12
-
ns
-
-
113
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 67mH, IAS = 0.43A.
ISD = 0.54A
-
ISD = 0.3A
-
ISD = 0.54A, dISD/dt = 100A/µs -
ISD = 0.54A, dISD/dt = 100A/µs -
-
1.25
V
-
1.0
V
-
22
ns
-
18
nC
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
Share Link: 