FDT461N Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDT461N Datasheet PDF : 10 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
4
1
100µs
OPERATION IN THIS
0.1
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
0.01
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
1
10
120
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
1.2
0.8
TJ = 175oC
TJ = 25oC
0.4
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
1.6
3.0
VGS = 4.5V
VGS = 3V
1.2
2.5
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.8
VGS = 2.5V
0.4
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
ID = 0.54A
2.0
1.5
ID = 0.2A
1.0
2
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.2
VGS = VDS, ID = 250µA
1.0
1.0
0.8
0.5
-80
VGS = 10V, ID = 0.54A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
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