E28F004BL-T150 Ver la hoja de datos (PDF) - Intel

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componentes Descripción

Fabricante

E28F004BL-T150

4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY

Intel 

28F400BL-T B 28F004BL-T B

Table 1 Bus Operations for WORD-WIDE Mode (BYTE e VIH)

Mode

Notes RP

CE

OE

WE

A9 A0 VPP DQ0-15

Read

12

VIH

VIL

VIL

VIH

X

X

X

DOUT

Output Disable

VIH

VIL

VIH

VIH

X

X

X High Z

Standby

VIH

VIH

X

X

X X X High Z

Deep Power-Down

9

VIL

X

X

X

X X X High Z

Intelligent Identifier (Mfr)

34

VIH

VIL

VIL

VIH VID VIL X 0089H

Intelligent Identifier (Device) 3 4 5 10 VIH

VIL

VIL

VIH VID VIH X 4470H

4471H

Write

678

VIH

VIL

VIH

VIL

XX X

DIN

Table 2 Bus Operations for BYTE-WIDE Mode (BYTE e VIL)

Mode

Notes RP CE OE WE A9 A0 A-1 VPP

Read

12

VIH VIL VIL VIH X X X X

Output Disable

VIH VIL VIH VIH X X X X

Standby

VIH VIH

X

X XXX X

Deep Power-Down

VIL

X

X

X XXX X

Intelligent Identifier 3 4

(Mfr)

VIH VIL VIL VIH VID VIL X X

Intelligent Identifier 3 4 5 10 VIH VIL VIL VIH VID VIH X X

(Device)

Write

678

VIH VIL VIH VIL X X X X

DQ0-7

DOUT

High Z

High Z

High Z

89H

70H

71H

DIN

DQ8 – 14

High Z

High Z

High Z

High Z

High Z

High Z

High Z

NOTES

1 Refer to DC Characteristics

2 X can be VIL or VIH for control pins and addresses VPPL or VPPH for VPP

3 See DC Characteristics for VPPL VPPH VHH VID voltages

4 Manufacturer and Device codes may also be accessed via a CUI write sequence A1 – A17 e VIL

5 Device ID e 4470H for 28F400BL-T and 4471H for 28F400BL-B

6 Refer to Table 4 for valid DIN during a write operation

7 Command writes for Block Erase or Word Byte Write are only executed when VPP e VPPH

8 To write or erase the boot block hold RP at VHH

9 RP must be at GND g0 2V to meet the 1 2 mA maximum deep power-down current

10 The device ID codes are identical to those of the 28F400BX 5V version and SmartVoltage equivalent

17

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