E28F004BL-T150 Ver la hoja de datos (PDF) - Intel

Número de pieza

componentes Descripción

Fabricante

E28F004BL-T150

4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY

Intel 

28F400BL-T B 28F004BL-T B

3 1 2 2 28F004BL-T Memory Map

The 28F004BL-T device has the 16-Kbyte boot

block located from 7C000H to 7FFFFH to accom-

modate those microprocessors that boot from the

top of the address map In the 28F004BL-T the first

8-Kbyte parameter block resides in memory space

from 7A000H to 7BFFFH The second 8-Kbyte pa-

rameter block resides in memory space from

78000H to 79FFFH The 96-Kbyte main block re-

sides in memory space from 60000H to 77FFFH

The three 128-Kbyte main blocks reside in memory

space from 40000H to 5FFFFH 20000H to 3FFFFH

and 00000H to 1FFFFH

7FFFFH

7C000H

7BFFFH

7A000H

79FFFH

78000H

77FFFH

60000H

5FFFFH

40000H

3FFFFH

20000H

1FFFFH

16-Kbyte BOOT BLOCK

8-Kbyte PARAMETER BLOCK

8-Kbyte PARAMETER BLOCK

96-Kbyte MAIN BLOCK

128-Kbyte MAIN BLOCK

128-Kbyte MAIN BLOCK

128-Kbyte MAIN BLOCK

00000H

Figure 11 28F004BL-T Memory Map

4 0 PRODUCT FAMILY PRINCIPLES

OF OPERATION

Flash memory augments EPROM functionality with

in-circuit electrical write and erase The 4-Mbit flash

memory family utilizes a Command User Interface

(CUI) and internally generated and timed algorithms

to simplify write and erase operations

The CUI allows for fixed power supplies during era-

sure and programming and maximum EPROM com-

patibility

In the absence of high voltage on the VPP pin the

4-Mbit flash family will only successfully execute the

following commands Read Array Read Status Reg-

ister Clear Status Register and Intelligent Identifier

mode The device provides standard EPROM read

standby and output disable operations Manufactur-

er Identification and Device Identification data can

be accessed through the CUI or through the stan-

dard EPROM A9 high voltage access (VID) (for

PROM programmer equipment)

The same EPROM read standby and output disable

functions are available when high voltage is applied

to the VPP pin In addition high voltage on VPP al-

lows write and erase of the device All functions as-

sociated with altering memory contents write and

erase Intelligent Identifier read and Read Status are

accessed via the CUI

The purpose of the Write State Machine (WSM) is to

completely automate the write and erasure of the

device The WSM will begin operation upon receipt

of a signal from the CUI and will report status back

through a Status Register The CUI will handle the

WE interface to the data and address latches as

well as system software requests for status while the

WSM is in operation

4 1 28F400BL Bus Operations

Flash memory reads erases and writes in-system

via the local CPU All bus cycles to or from the flash

memory conform to standard microprocessor bus

cycles

16

Share Link: