E28F004BL-T150 Ver la hoja de datos (PDF) - Intel

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Fabricante

E28F004BL-T150

4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY

Intel 

28F400BL-T B 28F004BL-T B

Revision History

Number

Description

-001 Original Version

-002

-003

Modified BYTE Timing Waveforms

Modified tDVWH parameter for AC Characteristics for Write Operations

PWD renamed to RP for JEDEC standarization compatibility

Combined VCC Read Current for 28F400BX-L Word-Wide and Byte-Wide Mode

and 28F004BX-L Byte Wide Mode in DC Characteristics tables

Changed IPPS current spec from g10 mA to g15 mA in DC Characteristics table

Added Boot Block Unlock current spec in DC Characteristics tables

Improved tPWH spec to 600 ns (was 700 ns)

Changed ICCR maximum spec from 20 mA to 25 mA and added 15 mA typical spec

in DC Characteristics Table

-004

Added IOH CMOS specification

Expanded temperature operating range

from 0 C – 70 C to b20 C – 70 C

Product naming changed

28F400BX-TL BL changed to 28F400BL-T B

28F004BX-TL BL changed to 28F004BL-T B

Typographical errors corrected

Added 28F400BX interface to Intel386TM EX

Embedded Processor block diagram

Added upgrade considerations for

SmartVoltage Boot Block products

Previously specified VCC tolerance of 3 0V to 3 6V for Read

Program and Erase has been changed to 3 15V to 3 6V for

Program and Erase while Read remains 3 0V to 3 6V

-005 Added references to input rise fall times

44

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