E28F004BL-T150 Ver la hoja de datos (PDF) - Intel
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E28F004BL-T150 Datasheet PDF : 44 Pages
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28F400BL-T B 28F004BL-T B
AC CHARACTERISTICS FOR CE -CONTROLLED WRITE OPERATIONS
VCC e 3 15V – 3 6V 5 0V g10%
Versions
28F400BL-150
28F004BL-150
Unit
Symbol
Parameter
Notes Min
Max
tAVAV
tPHEL
tWC Write Cycle Time
tPS RP High Recovery to
CE Going Low
150
ns
10
ms
tWLEL tWS WE Setup to CE Going Low
0
ns
tPHHEH tPHS RP VHH Setup to CE Going High
68
200
ns
tVPEH tVPS VPP Setup to CE Going High
58
200
ns
tAVEH tAS Address Setup to CE Going High
3
95
ns
tDVEH tDS Data Setup to CE Going High
4
100
ns
tELEH tCP CE Pulse Width
100
ns
tEHDX tDH Data Hold from CE High
4
0
ns
tEHAX tAH Address Hold from CE High
3
10
ns
tEHWH tWH WE Hold from CE High
10
ns
tEHEL tCPH CE Pulse Width High
50
ns
tEHQV1
Duration of Programming
Operation Word Byte
256
6
ms
tEHQV2
Duration of Erase Operation (Boot)
256
03
s
tEHQV3
Duration of Erase
Operation (Parameter)
256
03
s
tEHQV4
tQVVL
tQVPH
tPHBR
tVPH
tPPH
tIR
tIF
Duration of Erase Operation (Main)
VPP Hold from Valid SRD
RP VHH Hold from Valid SRD
Boot-Block Relock Delay
Input Rise Time
Input Fall Time
256
06
58
0
68
0
78
s
ns
ns
200
ns
10
ns
10
ns
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE and WE in systems where
CE defines the write pulse-width (within a longer WE timing waveform) all set-up hold and inactive WE times
should be measured relative to the CE waveform
2 3 4 5 6 7 8 Refer to AC Characteristics for WE -Controlled Write operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
Characteristics during Read Mode
41
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