BF1203 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BF1203 Datasheet PDF : 20 Pages
| |||
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
handbook,1h6alfpage
ID
(mA)
12
MCD939
8
4
0
0
10
20
30
40
50
IG1 (µA)
Amplifier a
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Fig.7 Drain current as a function of gate 1 current;
typical values.
handbook,2h0alfpage
ID
(mA)
16
MCD940
12
8
4
0
0
1
2
3
4
5
VGG (V)
Amplifier a
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 62 kΩ (connected to VGG); see Fig.35.
Fig.8 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
25
handbook, halfpage
ID
(mA)
20
15
10
RG1 = 39 kΩ
47 kΩ
56 kΩ
62 kΩ
MCD941
68 kΩ
82 kΩ
100 kΩ
5
0
0
2
4
6
8
10
VGG = VDS (V)
Amplifier a
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.35.
Fig.9 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
MCD942
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
0
2
4
6
VG2-S (V)
Amplifier a
VDS = 5 V; Tj = 25 °C.
RG1 = 62 kΩ (connected to VGG); see Fig.35.
Fig.10 Drain current as a function of gate 2
voltage; typical values.
2001 Apr 25
7
Share Link: 