BF1203 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BF1203 Datasheet PDF : 20 Pages
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Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
handbook1, 0h2alfpage
yis
(mS)
10
1
MGT588
bis
gis
handbook1, 0h3alfpage
|yrs|
(µS)
102
10
MGT589 −103
ϕ rs
(deg)
ϕrs
−102
|yrs|
−10
10−1
10
102
f (MHz)
103
Amplifier a
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.15 Input admittance as a function of frequency;
typical values.
1
−1
10
102
f (MHz)
103
Amplifier a
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook1, 0ha2lfpage
|yfs|
(mS)
10
|yfs|
ϕ fs
MGT590 −102
ϕ fs
(deg)
−10
handbook,1h0alfpage
yos
(mS)
1
10−1
MGT591
bos
gos
1
−1
10
102
f (MHz)
103
Amplifier a
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
10−2
10
102
f (MHz)
103
Amplifier a
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.18 Output admittance as a function of
frequency; typical values.
2001 Apr 25
9
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