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Número de pieza
componentes Descripción
DG648BH45 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG648BH45
Gate Turn-off Thyristor
Dynex Semiconductor
DG648BH45 Datasheet PDF : 18 Pages
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11
12
13
14
15
16
17
18
10000
8000
Conditions:
T
j
= 125°C,
C
S
= 2.0µF,
dI
GQ
/dt = 40A/µs
6000
4000
V
DRM
0.75x V
DRM
0.5x V
DRM
DG648BH45
2000
0
0
500
1000
1500
2000
2500
On-state current I
T
- (A)
FIG 17
F
T
ig
U
.
R
17
N
T
O
ur
F
n
F
-o
E
ff
N
e
E
ne
R
r
G
gy
Y
vs o
O
n-
N
sta
S
te
TA
cu
T
r
E
re
C
nt
URRENT
12000
10000
Conditions:
T
j
= 125°C,
C
S
= 2.0µF,
I
T
= 2000A
V
DRM
3000
8000
0.75x V
DRM
6000
0.5x V
DRM
4000
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
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